NP100N055PDH Datasheet. Specs and Replacement
Type Designator: NP100N055PDH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 288 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: TO-263
NP100N055PDH substitution
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NP100N055PDH datasheet
np100n055mdh np100n055ndh np100n055pdh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np100n055muh np100n055nuh np100n055puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np100n055puk.pdf
Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss Ciss = 4900 pF TYP. (VDS = 25 V) Designed for... See More ⇒
np100n04puk.pdf
Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for... See More ⇒
Detailed specifications: NP100N04NUJ, NP100N04PDH, NP100N04PUH, NP100N04PUK, NP100N055MDH, NP100N055MUH, NP100N055NDH, NP100N055NUH, IRFB4115, NP100N055PUH, NP100N055PUK, NP100P04PDG, NP100P04PLG, NP100P06PDG, NP100P06PLG, NP109N04PUG, NP109N04PUJ
Keywords - NP100N055PDH MOSFET specs
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