NP109N04PUG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP109N04PUG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 980 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: TO-263

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NP109N04PUG datasheet

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NP109N04PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP109N04PUG

Preliminary Data Sheet R07DS0544EJ0100 NP109N04PUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7200 pF TYP. (VDS = 25 V) Designed for

 4.2. Size:310K  renesas
 np109n04puj.pdf pdf_icon

NP109N04PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP109N04PUG

Preliminary Data Sheet NP109N055PUK R07DS0590EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7500 pF TYP. (VDS = 25 V) Designed for

MOSTRAR MÁS

Otros transistores... NP100N055NUH, NP100N055PDH, NP100N055PUH, NP100N055PUK, NP100P04PDG, NP100P04PLG, NP100P06PDG, NP100P06PLG, IRF9540, NP109N04PUJ, NP109N04PUK, NP109N055PUJ, NP109N055PUK, NP110N03PUG, NP110N04PDG, NP110N04PUG, NP110N04PUJ