NP109N04PUG datasheet, аналоги, основные параметры
Наименование производителя: NP109N04PUG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 980 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: TO-263
Аналог (замена) для NP109N04PUG
- подборⓘ MOSFET транзистора по параметрам
NP109N04PUG даташит
np109n04pug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np109n04puk.pdf
Preliminary Data Sheet R07DS0544EJ0100 NP109N04PUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7200 pF TYP. (VDS = 25 V) Designed for
np109n04puj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np109n055puk.pdf
Preliminary Data Sheet NP109N055PUK R07DS0590EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7500 pF TYP. (VDS = 25 V) Designed for
Другие IGBT... NP100N055NUH, NP100N055PDH, NP100N055PUH, NP100N055PUK, NP100P04PDG, NP100P04PLG, NP100P06PDG, NP100P06PLG, IRF9540, NP109N04PUJ, NP109N04PUK, NP109N055PUJ, NP109N055PUK, NP110N03PUG, NP110N04PDG, NP110N04PUG, NP110N04PUJ
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