NP160N04TDG Todos los transistores

 

NP160N04TDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP160N04TDG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TO-263-7
 

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NP160N04TDG Datasheet (PDF)

 ..1. Size:365K  renesas
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NP160N04TDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:195K  renesas
 np160n04tuj.pdf pdf_icon

NP160N04TDG

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

 5.2. Size:356K  renesas
 np160n04tug.pdf pdf_icon

NP160N04TDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.3. Size:228K  renesas
 np160n04tuk.pdf pdf_icon

NP160N04TDG

Preliminary Data Sheet R07DS0543EJ0100NP160N04TUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f

MOSTRAR MÁS

Otros transistores... NP110N04PUG , NP110N04PUJ , NP110N04PUK , NP110N055PUG , NP110N055PUJ , NP110N055PUK , NP15P04SLG , NP15P06SLG , TK10A60D , NP160N04TUG , NP160N04TUJ , NP160N04TUK , NP160N055TUJ , NP160N055TUK , NP161N04TUG , NP16N04YUG , NP16N06YLL .

History: IRF7309I | MTD3055EL | JFPC5N80C | IPI70R950CE | HRP45N06K | IPP072N10N3G | HRS45N08K

 

 
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