NP160N04TDG Datasheet. Specs and Replacement

Type Designator: NP160N04TDG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO-263-7

NP160N04TDG substitution

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NP160N04TDG datasheet

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NP160N04TDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP160N04TDG

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe... See More ⇒

 5.2. Size:356K  renesas
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NP160N04TDG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.3. Size:228K  renesas
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NP160N04TDG

Preliminary Data Sheet R07DS0543EJ0100 NP160N04TUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f... See More ⇒

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Detailed specifications: NP110N04PUG, NP110N04PUJ, NP110N04PUK, NP110N055PUG, NP110N055PUJ, NP110N055PUK, NP15P04SLG, NP15P06SLG, 13N50, NP160N04TUG, NP160N04TUJ, NP160N04TUK, NP160N055TUJ, NP160N055TUK, NP161N04TUG, NP16N04YUG, NP16N06YLL

Keywords - NP160N04TDG MOSFET specs

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