NP160N055TUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NP160N055TUK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 126 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO-263-7

Búsqueda de reemplazo de MOSFET NP160N055TUK

NP160N055TUK Datasheet (PDF)

..1. Size:102K renesas
np160n055tuk.pdf

Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for

3.1. Size:207K renesas
np160n055tuj.pdf

Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Desig

7.1. Size:365K renesas
np160n04tdg.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.2. Size:195K renesas
np160n04tuj.pdf

Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

7.3. Size:356K renesas
np160n04tug.pdf

7.4. Size:228K renesas
np160n04tuk.pdf

Preliminary Data Sheet R07DS0543EJ0100NP160N04TUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: