Справочник MOSFET. NP160N055TUK

 

NP160N055TUK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NP160N055TUK
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 126 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 770 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: TO-263-7

 Аналог (замена) для NP160N055TUK

 

 

NP160N055TUK Datasheet (PDF)

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Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for

 3.1. Size:207K  renesas
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Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Desig

 7.1. Size:365K  renesas
 np160n04tdg.pdf

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:195K  renesas
 np160n04tuj.pdf

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Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Designe

 7.3. Size:356K  renesas
 np160n04tug.pdf

NP160N055TUK NP160N055TUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.4. Size:228K  renesas
 np160n04tuk.pdf

NP160N055TUK NP160N055TUK

Preliminary Data Sheet R07DS0543EJ0100NP160N04TUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.5 m MAX. ( VGS = 10 V, ID = 80 A ) Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) Designed f

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