NP180N04TUJ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP180N04TUJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 348 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 1250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: TO-263-7

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NP180N04TUJ datasheet

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NP180N04TUJ

Preliminary Data Sheet R07DS0180EJ0100 NP180N04TUJ Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 1.5 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut

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NP180N04TUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP180N04TUJ

Preliminary Data Sheet R07DS0542EJ0100 NP180N04TUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) Designed

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 np180n055tuj.pdf pdf_icon

NP180N04TUJ

Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 22, 2010 Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut

MOSTRAR MÁS

Otros transistores... NP160N04TUJ, NP160N04TUK, NP160N055TUJ, NP160N055TUK, NP161N04TUG, NP16N04YUG, NP16N06YLL, NP180N04TUG, AON7506, NP180N04TUK, NP180N055TUJ, NP180N055TUK, NP20N10YDF, NP20P04SLG, NP20P06SLG, NP20P06YLG, NP22N055HHE