All MOSFET. NP180N04TUJ Datasheet

 

NP180N04TUJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: NP180N04TUJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 348 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO-263-7

 NP180N04TUJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP180N04TUJ Datasheet (PDF)

 ..1. Size:212K  renesas
 np180n04tuj.pdf

NP180N04TUJ NP180N04TUJ

Preliminary Data Sheet R07DS0180EJ0100NP180N04TUJ Rev.1.00Dec 17, 2010MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 1.5 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut

 4.1. Size:305K  renesas
 np180n04tug.pdf

NP180N04TUJ NP180N04TUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.2. Size:245K  renesas
 np180n04tuk.pdf

NP180N04TUJ NP180N04TUJ

Preliminary Data Sheet R07DS0542EJ0100NP180N04TUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) Designed

 7.1. Size:209K  renesas
 np180n055tuj.pdf

NP180N04TUJ NP180N04TUJ

Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 22, 2010Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut

 7.2. Size:102K  renesas
 np180n055tuk.pdf

NP180N04TUJ NP180N04TUJ

Preliminary Data Sheet NP180N055TUK R07DS0593EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed fo

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQP4P40

 

 
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