NP180N04TUJ Datasheet. Specs and Replacement
Type Designator: NP180N04TUJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 348 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 1250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO-263-7
NP180N04TUJ substitution
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NP180N04TUJ datasheet
np180n04tuj.pdf
Preliminary Data Sheet R07DS0180EJ0100 NP180N04TUJ Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 1.5 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut... See More ⇒
np180n04tug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
np180n04tuk.pdf
Preliminary Data Sheet R07DS0542EJ0100 NP180N04TUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) Low Ciss Ciss = 10500 pF TYP. ( VDS = 25 V ) Designed... See More ⇒
np180n055tuj.pdf
Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 22, 2010 Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut... See More ⇒
Detailed specifications: NP160N04TUJ, NP160N04TUK, NP160N055TUJ, NP160N055TUK, NP161N04TUG, NP16N04YUG, NP16N06YLL, NP180N04TUG, AON7506, NP180N04TUK, NP180N055TUJ, NP180N055TUK, NP20N10YDF, NP20P04SLG, NP20P06SLG, NP20P06YLG, NP22N055HHE
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