NP20P06YLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP20P06YLG

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm

Encapsulados: HSON

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NP20P06YLG datasheet

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NP20P06YLG

Preliminary Data Sheet NP20P06YLG R07DS0706EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Apr 17, 2012 Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 47 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 64 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 70 m

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NP20P06YLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP20P06YLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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