NP20P06YLG Datasheet and Replacement
Type Designator: NP20P06YLG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: HSON
NP20P06YLG substitution
NP20P06YLG Datasheet (PDF)
np20p06ylg.pdf
Preliminary Data Sheet NP20P06YLG R07DS0706EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Apr 17, 2012Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 47 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 64 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 70 m
np20p06slg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np20p04slg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: NP180N04TUG , NP180N04TUJ , NP180N04TUK , NP180N055TUJ , NP180N055TUK , NP20N10YDF , NP20P04SLG , NP20P06SLG , STF13NM60N , NP22N055HHE , NP22N055HLE , NP22N055IHE , NP22N055ILE , NP22N055SHE , NP22N055SLE , NP23N06YDG , NP28N10SDE .
History: SVF12N60S | SIHFI720G
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History: SVF12N60S | SIHFI720G
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