All MOSFET. NP20P06YLG Datasheet

 

NP20P06YLG Datasheet and Replacement


   Type Designator: NP20P06YLG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: HSON
 

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NP20P06YLG Datasheet (PDF)

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NP20P06YLG

Preliminary Data Sheet NP20P06YLG R07DS0706EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Apr 17, 2012Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 47 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 64 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 70 m

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NP20P06YLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:300K  renesas
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NP20P06YLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: NP180N04TUG , NP180N04TUJ , NP180N04TUK , NP180N055TUJ , NP180N055TUK , NP20N10YDF , NP20P04SLG , NP20P06SLG , STF13NM60N , NP22N055HHE , NP22N055HLE , NP22N055IHE , NP22N055ILE , NP22N055SHE , NP22N055SLE , NP23N06YDG , NP28N10SDE .

History: SVF12N60S | SIHFI720G

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