NP36N055HHE Todos los transistores

 

NP36N055HHE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP36N055HHE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO-251
 

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NP36N055HHE Datasheet (PDF)

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NP36N055HHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:282K  renesas
 np36n055hle np36n055ile np36n055sle.pdf pdf_icon

NP36N055HHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:250K  renesas
 np36n10sde.pdf pdf_icon

NP36N055HHE

Preliminary Data Sheet R07DS0508EJ0100NP36N10SDE Rev.1.00Sep 21, 2011MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 3500

Otros transistores... NP34N055HLE , NP34N055IHE , NP34N055ILE , NP34N055SHE , NP34N055SLE , NP35N04YLG , NP35N04YUG , NP35N055YUK , IRF9640 , NP36N055HLE , NP36N055IHE , NP36N055ILE , NP36N055SHE , NP36N055SLE , NP36N10SDE , NP36P04KDG , NP36P04SDG .

History: BSS8402DW | ISCNH342W | IRFB23N20D | SRT15N750LD

 

 
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