NP36N055HHE Datasheet. Specs and Replacement

Type Designator: NP36N055HHE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO-251

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NP36N055HHE datasheet

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NP36N055HHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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NP36N055HHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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 np36n10sde.pdf pdf_icon

NP36N055HHE

Preliminary Data Sheet R07DS0508EJ0100 NP36N10SDE Rev.1.00 Sep 21, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss Ciss = 3500... See More ⇒

Detailed specifications: NP34N055HLE, NP34N055IHE, NP34N055ILE, NP34N055SHE, NP34N055SLE, NP35N04YLG, NP35N04YUG, NP35N055YUK, K2611, NP36N055HLE, NP36N055IHE, NP36N055ILE, NP36N055SHE, NP36N055SLE, NP36N10SDE, NP36P04KDG, NP36P04SDG

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