NP50P04SLG Todos los transistores

 

NP50P04SLG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP50P04SLG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 84 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0096 Ohm
   Paquete / Cubierta: TO-252
 

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NP50P04SLG Datasheet (PDF)

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NP50P04SLG

Preliminary Data Sheet R07DS0241EJ0100NP50P04SLG Rev.1.00Feb 09, 2011MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo

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NP50P04SLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:283K  renesas
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NP50P04SLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:230K  renesas
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NP50P04SLG

Preliminary Data Sheet NP50P03YDG R07DS0019EJ0200Rev.2.00MOS FIELD EFFECT TRANSISTOR Mar 16, 2011Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 8.4 m MAX. (VGS = -10 V, ID = -25 A) Low Ciss: Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V) Design

Otros transistores... NP48N055MHE , NP48N055MLE , NP48N055NHE , NP48N055NLE , NP50N04YUK , NP50P03YDG , NP50P04KDG , NP50P04SDG , IRF4905 , NP50P06KDG , NP50P06SDG , NP52N055SUG , NP52N06SLG , NP55N03SUG , NP55N04SUG , NP55N055SDG , NP55N055SUG .

History: NCE3407E | SSPL6040D | NTR5103N | JMTL2302A | NCE3406N | IRFR3707PBF | NP60N04NUK

 

 
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