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NP50P04SLG Specs and Replacement


   Type Designator: NP50P04SLG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO-252
 

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NP50P04SLG datasheet

 ..1. Size:233K  renesas
 np50p04slg.pdf pdf_icon

NP50P04SLG

Preliminary Data Sheet R07DS0241EJ0100 NP50P04SLG Rev.1.00 Feb 09, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 m MAX. (VGS = -4.5 V, ID = -25 A) Lo... See More ⇒

 6.1. Size:312K  renesas
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NP50P04SLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:283K  renesas
 np50p04kdg.pdf pdf_icon

NP50P04SLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:230K  renesas
 np50p03ydg.pdf pdf_icon

NP50P04SLG

Preliminary Data Sheet NP50P03YDG R07DS0019EJ0200 Rev.2.00 MOS FIELD EFFECT TRANSISTOR Mar 16, 2011 Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 8.4 m MAX. (VGS = -10 V, ID = -25 A) Low Ciss Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V) Design... See More ⇒

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Detailed specifications: NP48N055MHE , NP48N055MLE , NP48N055NHE , NP48N055NLE , NP50N04YUK , NP50P03YDG , NP50P04KDG , NP50P04SDG , IRF4905 , NP50P06KDG , NP50P06SDG , NP52N055SUG , NP52N06SLG , NP55N03SUG , NP55N04SUG , NP55N055SDG , NP55N055SUG .

Keywords - NP50P04SLG MOSFET specs

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