NP82N10PUF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NP82N10PUF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 82 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.3 V
Carga de la puerta (Qg): 64 nC
Tiempo de subida (tr): 16 nS
Conductancia de drenaje-sustrato (Cd): 340 pF
Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm
Paquete / Cubierta: TO-263
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NP82N10PUF Datasheet (PDF)
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Preliminary Data Sheet R07DS0444EJ0100NP82N10PUF Rev.1.00Aug 26, 2011MOS FIELD EFFECT TRANSISTOR Description The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 15 m MAX. (VGS = 10 V, ID = 41 A) Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V) De
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Liste
Recientemente añadidas las descripciónes de los transistores:
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