NP82N10PUF Datasheet and Replacement
Type Designator: NP82N10PUF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 82
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 340
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
TO-263
-
MOSFET ⓘ Cross-Reference Search
NP82N10PUF Datasheet (PDF)
..1. Size:244K renesas
np82n10puf.pdf 
Preliminary Data Sheet R07DS0444EJ0100NP82N10PUF Rev.1.00Aug 26, 2011MOS FIELD EFFECT TRANSISTOR Description The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 15 m MAX. (VGS = 10 V, ID = 41 A) Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V) De
9.1. Size:312K renesas
np82n055mug np82n055nug.pdf 
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9.2. Size:293K renesas
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9.3. Size:282K renesas
np82n04pdg.pdf 
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9.4. Size:272K renesas
np82n03pug.pdf 
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9.5. Size:305K renesas
np82n06plg.pdf 
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9.8. Size:293K renesas
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9.9. Size:319K renesas
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9.10. Size:259K renesas
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9.11. Size:347K renesas
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9.12. Size:294K renesas
np82n055pug.pdf 
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9.13. Size:315K renesas
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9.14. Size:318K renesas
np82n06mlg.pdf 
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Datasheet: NP82N055NHE
, NP82N055NLE
, NP82N055NUG
, NP82N055PUG
, NP82N06MLG
, NP82N06NLG
, NP82N06PDG
, NP82N06PLG
, IRF1407
, NP82P04PLF
, NP83P04PDG
, NP83P06PDG
, NP84N04CHE
, NP84N04DHE
, NP84N04EHE
, NP84N04KHE
, NP84N04MHE
.
History: OSG70R1K4FF
| SLD60R380S2
| IXTA4N150HV
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