NP82N10PUF Datasheet. Specs and Replacement
Type Designator: NP82N10PUF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO-263
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NP82N10PUF datasheet
..1. Size:244K renesas
np82n10puf.pdf 
Preliminary Data Sheet R07DS0444EJ0100 NP82N10PUF Rev.1.00 Aug 26, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 15 m MAX. (VGS = 10 V, ID = 41 A) Low Ciss Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V) De... See More ⇒
9.1. Size:312K renesas
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Detailed specifications: NP82N055NHE, NP82N055NLE, NP82N055NUG, NP82N055PUG, NP82N06MLG, NP82N06NLG, NP82N06PDG, NP82N06PLG, NCEP15T14, NP82P04PLF, NP83P04PDG, NP83P06PDG, NP84N04CHE, NP84N04DHE, NP84N04EHE, NP84N04KHE, NP84N04MHE
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