NP89N055NUK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP89N055NUK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm

Encapsulados: TO-262

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NP89N055NUK datasheet

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 np89n055muk np89n055nuk.pdf pdf_icon

NP89N055NUK

Preliminary Data Sheet NP89N055MUK, NP89N055NUK R07DS0600EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) D

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NP89N055NUK

Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 17, 2011 Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au

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 np89n04puk.pdf pdf_icon

NP89N055NUK

Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 07, 2011 Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut

 8.2. Size:103K  renesas
 np89n04muk np89n04nuk.pdf pdf_icon

NP89N055NUK

Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Des

MOSTRAR MÁS

Otros transistores... NP88N075KUE, NP88N075MUE, NP88N075NUE, NP89N04MUK, NP89N04NUK, NP89N04PDK, NP89N04PUK, NP89N055MUK, IRFB4227, NP89N055PUK, NP90N03VHG, NP90N03VLG, NP90N03VUG, NP90N04MDH, NP90N04MUG, NP90N04MUH, NP90N04MUK