NP90N03VUG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NP90N03VUG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 105 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 600 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de NP90N03VUG MOSFET
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NP90N03VUG datasheet
..1. Size:311K renesas
np90n03vug.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
6.1. Size:229K renesas
np90n03vlg.pdf
Preliminary Data Sheet R07DS0129EJ0100 NP90N03VLG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 3.2 m MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.0 m MAX. (VGS = 4.5 V, ID = 35 A) Low input c
6.2. Size:219K renesas
np90n03vhg.pdf
Preliminary Data Sheet R07DS0128EJ0100 NP90N03VHG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.2 m MAX. (VGS = 10 V, ID = 45 A) Low input capacitance Ciss = 5000 pF TYP. (VDS = 25 V, VGS =
8.1. Size:330K renesas
np90n04vlg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:103K renesas
np90n055muk np90n055nuk.pdf
Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4900 pF TYP. (VDS = 25 V) D
8.3. Size:103K renesas
np90n04muk np90n04nuk.pdf
Preliminary Data Sheet NP90N04MUK, NP90N04NUK R07DS0601EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4700 pF TYP. (VDS = 25 V) Des
8.4. Size:353K renesas
np90n04muh np90n04nuh np90n04puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:325K renesas
np90n055vug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:102K renesas
np90n055vuk.pdf
Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) Designed for a
8.7. Size:359K renesas
np90n055muh np90n055nuh np90n055puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:358K renesas
np90n055mdh np90n055ndh np90n055pdh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:315K renesas
np90n04vdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.10. Size:329K renesas
np90n055vdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.11. Size:329K renesas
np90n06vlg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.12. Size:320K renesas
np90n04mug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.13. Size:265K renesas
np90n04puf.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.14. Size:311K renesas
np90n04vug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.15. Size:102K renesas
np90n04vuk.pdf
Preliminary Data Sheet NP90N04VUK R07DS0577EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Designed for auto
8.16. Size:170K renesas
np90n04vlk.pdf
Preliminary Data Sheet NP90N04VLK R07DS1236EJ0100 40 V 90 A N-channel Power MOS FET Rev.1.00 Application Automotive Nov 10, 2014 Description The NP90N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3800 pF T
8.17. Size:105K renesas
np90n04vdk.pdf
Preliminary Data Sheet NP90N04VDK R07DS1017EJ0100 40 V 90 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF
8.18. Size:355K renesas
np90n04mdh np90n04ndh np90n04pdh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... NP89N04NUK, NP89N04PDK, NP89N04PUK, NP89N055MUK, NP89N055NUK, NP89N055PUK, NP90N03VHG, NP90N03VLG, IRFB4115, NP90N04MDH, NP90N04MUG, NP90N04MUH, NP90N04MUK, NP90N04NDH, NP90N04NUH, NP90N04NUK, NP90N04PDH
