NP90N03VUG - описание и поиск аналогов

 ..1. Size:311K  renesas
 np90n03vug.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:229K  renesas
 np90n03vlg.pdf 

Preliminary Data Sheet R07DS0129EJ0100 NP90N03VLG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 3.2 m MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.0 m MAX. (VGS = 4.5 V, ID = 35 A) Low input c

 6.2. Size:219K  renesas
 np90n03vhg.pdf 

Preliminary Data Sheet R07DS0128EJ0100 NP90N03VHG Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.2 m MAX. (VGS = 10 V, ID = 45 A) Low input capacitance Ciss = 5000 pF TYP. (VDS = 25 V, VGS =

 8.1. Size:330K  renesas
 np90n04vlg.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:103K  renesas
 np90n055muk np90n055nuk.pdf 

Preliminary Data Sheet NP90N055MUK, NP90N055NUK R07DS0602EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4900 pF TYP. (VDS = 25 V) D

 8.3. Size:103K  renesas
 np90n04muk np90n04nuk.pdf 

Preliminary Data Sheet NP90N04MUK, NP90N04NUK R07DS0601EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4700 pF TYP. (VDS = 25 V) Des

 8.4. Size:353K  renesas
 np90n04muh np90n04nuh np90n04puh.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:325K  renesas
 np90n055vug.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:102K  renesas
 np90n055vuk.pdf 

Preliminary Data Sheet NP90N055VUK R07DS0578EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 4000 pF TYP. (VDS = 25 V) Designed for a

 8.7. Size:359K  renesas
 np90n055muh np90n055nuh np90n055puh.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:358K  renesas
 np90n055mdh np90n055ndh np90n055pdh.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:315K  renesas
 np90n04vdg.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:329K  renesas
 np90n055vdg.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.11. Size:329K  renesas
 np90n06vlg.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.12. Size:320K  renesas
 np90n04mug.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.13. Size:265K  renesas
 np90n04puf.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.14. Size:311K  renesas
 np90n04vug.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.15. Size:102K  renesas
 np90n04vuk.pdf 

Preliminary Data Sheet NP90N04VUK R07DS0577EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Designed for auto

 8.16. Size:170K  renesas
 np90n04vlk.pdf 

Preliminary Data Sheet NP90N04VLK R07DS1236EJ0100 40 V 90 A N-channel Power MOS FET Rev.1.00 Application Automotive Nov 10, 2014 Description The NP90N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3800 pF T

 8.17. Size:105K  renesas
 np90n04vdk.pdf 

Preliminary Data Sheet NP90N04VDK R07DS1017EJ0100 40 V 90 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF

 8.18. Size:355K  renesas
 np90n04mdh np90n04ndh np90n04pdh.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.