NP90N04VLG Todos los transistores

 

NP90N04VLG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP90N04VLG
   Código: 90N04LG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 105 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 90 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 90 nC
   Tiempo de subida (tr): 13 nS
   Conductancia de drenaje-sustrato (Cd): 480 pF
   Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
   Paquete / Cubierta: TO-252

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NP90N04VLG Datasheet (PDF)

 ..1. Size:330K  renesas
np90n04vlg.pdf

NP90N04VLG NP90N04VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:170K  renesas
np90n04vlk.pdf

NP90N04VLG NP90N04VLG

Preliminary Data Sheet NP90N04VLK R07DS1236EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 10, 2014Description The NP90N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3800 pF T

 6.1. Size:315K  renesas
np90n04vdg.pdf

NP90N04VLG NP90N04VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.2. Size:311K  renesas
np90n04vug.pdf

NP90N04VLG NP90N04VLG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.3. Size:102K  renesas
np90n04vuk.pdf

NP90N04VLG NP90N04VLG

Preliminary Data Sheet NP90N04VUK R07DS0577EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 29, 2011Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Designed for auto

 6.4. Size:105K  renesas
np90n04vdk.pdf

NP90N04VLG NP90N04VLG

Preliminary Data Sheet NP90N04VDK R07DS1017EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF

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