NP90N04VLG MOSFET. Datasheet pdf. Equivalent
Type Designator: NP90N04VLG
Marking Code: 90N04LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 105 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 480 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO-252
NP90N04VLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NP90N04VLG Datasheet (PDF)
np90n04vlg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np90n04vlk.pdf
Preliminary Data Sheet NP90N04VLK R07DS1236EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 10, 2014Description The NP90N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3800 pF T
np90n04vdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np90n04vug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np90n04vuk.pdf
Preliminary Data Sheet NP90N04VUK R07DS0577EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 29, 2011Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Designed for auto
np90n04vdk.pdf
Preliminary Data Sheet NP90N04VDK R07DS1017EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
