IPP050N06NG Datasheet. Equivalente

 ..1. Size:731K  infineon
 ipb050n06ng ipp050n06ng.pdf

IPP050N06N G IPB050N06N G Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 4 7 m + >= = O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package O O Mar

 9.1. Size:322K  infineon
 ipp055n03l ipp055n03lg ipb055n03lg.pdf

Type IPP055N03L G IPB055N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 9.2. Size:1638K  infineon
 ipp051n15n5.pdf

IPP051N15N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 150 V tab Features Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and s

 9.3. Size:781K  infineon
 ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf

IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D DE2?46 R DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7

 9.4. Size:683K  infineon
 ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf

pe IPB049N06L3 G IPP052N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E

 9.5. Size:835K  infineon
 ipp052ne7n3 ipi052ne7n3.pdf

## ! ! # ! ! TM # A0 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC D Q H35

 9.6. Size:691K  infineon
 ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 9.7. Size:563K  infineon
 ipp05cn10l2.pdf

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 9.8. Size:526K  infineon
 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia

 9.9. Size:844K  infineon
 ipp052ne7n3g ipi052ne7n3g.pdf

## ! ! # ! ! TM # A0 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC D Q H35

 9.10. Size:875K  infineon
 ipp054ne8n.pdf

IPB051NE8N G IPI05CNE8N G IPP054NE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R 1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E4

 9.11. Size:1022K  infineon
 ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features V 80 V DS Q ' 381>>5?B=1

 9.12. Size:689K  infineon
 ipb054n06n3g ipp057n06n3g.pdf

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 9.13. Size:503K  infineon
 ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R 5.1 m DS(on),max (TO 263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 9.14. Size:730K  infineon
 ipp055n03l .pdf

Type IPP055N03L G IPB055N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 9.15. Size:1809K  infineon
 ipp052n08n5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP052N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis

 9.16. Size:1847K  cn vbsemi
 ipp052n06l3.pdf

IPP052N06L3 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002

 9.17. Size:246K  inchange semiconductor
 ipp057n06n3.pdf

isc N-Channel MOSFET Transistor IPP057N06N3 IIPP057N06N3 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ideal for high frequency switching Optimized technology for DC/DC converters ABSOLUTE M

 9.18. Size:245K  inchange semiconductor
 ipp051n15n5.pdf

isc N-Channel MOSFET Transistor IPP051N15N5 IIPP051N15N5 FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T

 9.19. Size:245K  inchange semiconductor
 ipp052n06l3.pdf

isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 FEATURES Static drain-source on-resistance RDS(on) 4.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(

 9.20. Size:250K  inchange semiconductor
 ipp055n03l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP055N03L IIPP055N03L FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

 9.21. Size:246K  inchange semiconductor
 ipp052ne7n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP052NE7N3 IIPP052NE7N3 FEATURES Static drain-source on-resistance RDS(on) 5.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

 9.22. Size:245K  inchange semiconductor
 ipp05cn10n.pdf

isc N-Channel MOSFET Transistor IPP05CN10N IIPP05CN10N FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.23. Size:245K  inchange semiconductor
 ipp052n08n5.pdf

 9.24. Size:245K  inchange semiconductor
 ipp057n08n3.pdf

isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25