All MOSFET. IPP050N06NG Datasheet

 

IPP050N06NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP050N06NG

Marking Code: 050N06N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 126 nC

Rise Time (tr): 31 nS

Drain-Source Capacitance (Cd): 1500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: TO-220

IPP050N06NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP050N06NG Datasheet (PDF)

1.1. ipb050n06ng ipp050n06ng.pdf Size:731K _infineon

IPP050N06NG
IPP050N06NG

IPP050N06N G IPB050N06N G ™ Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 4 7 m + >= < 0F +& D4@A8>= O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; I 1 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B O "0;>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package ‐ O ‐ ‐ O ‐ Mar

5.1. ipp052ne7n3 ipi052ne7n3.pdf Size:835K _update-mosfet

IPP050N06NG
IPP050N06NG

 ## ! ! # ! ! TM #:A0< &<,9=4=>:< #<:/?.> %?88,?38B?>?EC B53D96931D9?> m D n) m x Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 3?>F5BD5BC D Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q .5BI B5C9CD1>35 + D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 81 6B55 1) Q * E1<96954 133

5.2. ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Size:503K _update-mosfet

IPP050N06NG
IPP050N06NG

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R 5.1 mΩ DS(on),max (TO 263) • Excellent gate charge x R product (FOM) DS(on) I 100 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target

 5.3. ipp051n15n5.pdf Size:1638K _infineon

IPP050N06NG
IPP050N06NG

IPP051N15N5 MOSFET TO-220-3 OptiMOSª5 Power-Transistor, 150 V tab Features • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Very low reverse recovery charge (Qrr) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and s

5.4. ipp055n03l .pdf Size:730K _infineon

IPP050N06NG
IPP050N06NG

Type IPP055N03L G IPB055N03L G ™ 3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 5.5 mW DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) •

 5.5. ipp055n03l.pdf Size:322K _infineon

IPP050N06NG
IPP050N06NG

Type IPP055N03L G IPB055N03L G OptiMOS™3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 5.5 mΩ DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on

5.6. ipp052n08n5.pdf Size:1809K _infineon

IPP050N06NG
IPP050N06NG

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSª5 Power-Transistor, 80 V IPP052N08N5 TO-220-3 1 Description tab Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x R product (FOM) DS(on) • Very low on-resis

5.7. ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf Size:683K _infineon

IPP050N06NG
IPP050N06NG

 pe IPB049N06L3 G IPP052N06L3 G ™ 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:

5.8. ipp052ne7n3 ipi052ne7n3.pdf Size:835K _infineon

IPP050N06NG
IPP050N06NG

 ## ! ! # ! ! TM #:A0< &<,9=4=>:< #<:/?.> %?88,?38B?>?EC B53D96931D9?> m D n) m x Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 3?>F5BD5BC D Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q .5BI B5C9CD1>35 + D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 81 6B55 1) Q * E1<96954 133

5.9. ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf Size:691K _infineon

IPP050N06NG
IPP050N06NG

 pe IPB054N06N3 G IPP057N06N3 G ™ 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?

5.10. ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Size:526K _infineon

IPP050N06NG
IPP050N06NG

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V 80 V DS • N-channel, normal level R 5.4 mΩ DS(on),max (SMD) • Excellent gate charge x R product (FOM) DS(on) I 80 A D • Very low on-resistance R DS(on) previous engineering • 175 °C operating temperature sample codes: IPP06CN08N • Pb-free lead plating; RoHS complia

5.11. ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Size:503K _infineon

IPP050N06NG
IPP050N06NG

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R 5.1 mΩ DS(on),max (TO 263) • Excellent gate charge x R product (FOM) DS(on) I 100 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target

5.12. ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf Size:781K _infineon

IPP050N06NG
IPP050N06NG

IPB05CN10N G IPI05CN10N G IPP05CN10N G ™ 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7

5.13. ipp054ne8n.pdf Size:875K _infineon

IPP050N06NG
IPP050N06NG

IPB051NE8N G IPI05CNE8N G IPP054NE8N G ™ 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R 1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E4

5.14. ipp05cn10l2.pdf Size:563K _infineon

IPP050N06NG
IPP050N06NG

 %% # ! ® % (>.;?6?@<> %><1A0@ 'A::.>E Features 1 D U ) 7<5BB9@ @C;=7 @9J9@ 1 m D n) m x U L79@@9BH ;5H9 7<5F;9 L D n) DFC8I7H !* ( 1 D U 09FM @CK CB F9G=GH5B79 D n) U X CD9F5H=B; H9AD9F5HIF9 U +6 :F99 @958 D@5H=B; - C#. 7CAD@=5BH 1) U , I5@=:=98 577CF8=B; HC % :CF H5F;9H 5DD@=75H=CB U $895@ :CF <=;< :F9EI9B7M GK=H7<=B; 5B8 GMB75.15. ipp05cn10n.pdf Size:245K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

isc N-Channel MOSFET Transistor IPP05CN10N,IIPP05CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

5.16. ipp051n15n5.pdf Size:245K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

isc N-Channel MOSFET Transistor IPP051N15N5,IIPP051N15N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T

5.17. ipp052ne7n3.pdf Size:246K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP052NE7N3,IIPP052NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE M

5.18. ipp055n03l.pdf Size:250K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP055N03L, IIPP055N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode: ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE

5.19. ipp052n08n5.pdf Size:245K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

isc N-Channel MOSFET Transistor IPP052N08N5, IIPP052N08N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25

5.20. ipp057n08n3.pdf Size:245K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

isc N-Channel MOSFET Transistor IPP057N08N3, IIPP057N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃

5.21. ipp052n06l3.pdf Size:245K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching for SMPS ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(

5.22. ipp057n06n3.pdf Size:246K _inchange_semiconductor

IPP050N06NG
IPP050N06NG

isc N-Channel MOSFET Transistor IPP057N06N3, IIPP057N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ideal for high frequency switching ·Optimized technology for DC/DC converters ·ABSOLUTE M

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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