IPD12CNE8NG Todos los transistores

 

IPD12CNE8NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD12CNE8NG

Código: 12CNE8N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 85 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 67 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 48 nC

Tiempo de elevación (tr): 21 nS

Conductancia de drenaje-sustrato (Cd): 608 pF

Resistencia drenaje-fuente RDS(on): 0.0124 Ohm

Empaquetado / Estuche: TO252

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IPD12CNE8NG Datasheet (PDF)

1.1. ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf Size:549K _update-mosfet

IPD12CNE8NG
IPD12CNE8NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1

1.2. ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf Size:549K _infineon

IPD12CNE8NG
IPD12CNE8NG

IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Product Summary Features V 85 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1

 3.1. ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf Size:623K _update-mosfet

IPD12CNE8NG
IPD12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

3.2. ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf Size:623K _infineon

IPD12CNE8NG
IPD12CNE8NG

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R (TO252) 12.4 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 67 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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