TP2301PR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TP2301PR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.95 V
   Qgⓘ - Carga de la puerta: 15.23 nC
   trⓘ - Tiempo de subida: 3.73 nS
   Cossⓘ - Capacitancia de salida: 145.54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT23

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TP2301PR Datasheet (PDF)

..1. Size:322K tiptek
tp2301pr.pdf

TP2301PR P-CHANNEL ENHANCEMENT-MODE MOSFET FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA WE DECLARE THAT

8.1. Size:190K diodes
zxtp23015cfh.pdf

ZXTP23015CFH15V, SOT23, PNP medium power transistorSummary V(BR)CES > -15V, V(BR)CEO > -15VV(BR)ECO > -6VIC(CONT) = -6A RCE(SAT) = 20m typicalVCE(SAT)

8.2. Size:607K cystek
mtp2301n3.pdf

Spec. No. : C322N3 CYStech Electronics Corp. Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res

8.3. Size:302K cystek
mtp2301s3.pdf

Spec. No. : C322S3 CYStech Electronics Corp. Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2301S3 ID -1.6A75m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m(typ.)RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance

8.4. Size:371K semtron
stp2301.pdf

STP2301 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP2301 is the P-Channel logic enhancement -20V/-3.0A, RDS(ON) =80m(typ.)@VGS =-4.5V mode power field effect transistor is produced using -20V/-2.0A, RDS(ON) =105m(typ.)@VGS =-2.5V high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and Super h

8.5. Size:869K cn vbsemi
mtp2301n3.pdf

MTP2301N3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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