TP2301PR Datasheet and Replacement

TP2301PR P-CHANNEL ENHANCEMENT-MODE MOSFET FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA WE DECLARE THAT

ZXTP23015CFH15V, SOT23, PNP medium power transistorSummary V(BR)CES > -15V, V(BR)CEO > -15VV(BR)ECO > -6VIC(CONT) = -6A RCE(SAT) = 20m typicalVCE(SAT)

Spec. No. : C322N3 CYStech Electronics Corp. Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res

Spec. No. : C322S3 CYStech Electronics Corp. Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2301S3 ID -1.6A75m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m(typ.)RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance

STP2301 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP2301 is the P-Channel logic enhancement -20V/-3.0A, RDS(ON) =80m(typ.)@VGS =-4.5V mode power field effect transistor is produced using -20V/-2.0A, RDS(ON) =105m(typ.)@VGS =-2.5V high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and Super h

MTP2301N3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS