TP9435PR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TP9435PR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SOT23

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TP9435PR Datasheet (PDF)

..1. Size:314K tiptek
tp9435pr.pdf

TP9435PR P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA

8.1. Size:295K cystek
mtp9435bdyq8.pdf

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP9435BDYQ8 ID -8.4A22m(typ.)RDSON(MAX)@VGS=-10V, ID=-7A 35m(typ.)RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

8.2. Size:358K cystek
mtp9435l3.pdf

Spec. No. : C400L3 Issued Date : 2009.06.22 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP9435L3 RDSON(MAX) 60m ID -6AFeatures Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol Outline SOT-223 MTP9435L3D S GGate

8.3. Size:343K cystek
mtp9435q8.pdf

Spec. No. : C426Q8 Issued Date : 2006.03.31 CYStech Electronics Corp.Revised Date : 2013.03.01 Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP9435Q8 ID -5.6ARDSON@VGS=-10V, ID=-5.3A 50m(typ) RDSON@VGS=-4.5V, ID=-4.2A 75m(typ) Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plat

8.4. Size:297K cystek
mtp9435bdyaq8.pdf

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435BDYAQ8 BVDSS -30VID -8.4A23m(typ.)RDSON(MAX)@VGS=-10V, ID=-7A 38m(typ.)RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYAQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

8.5. Size:396K stansontech
stp9435.pdf

STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note

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