TP9435PR MOSFET Datasheet: P-Ch, 30V, 5.3A. Full specification with pinout and replacement list

TP9435PR Specs and Replacement

Type Designator: TP9435PR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT23

TP9435PR substitution

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TP9435PR datasheet

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Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP9435BDYQ8 ID -8.4A 22m (typ.) RDSON(MAX)@VGS=-10V, ID=-7A 35m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best ... See More ⇒

8.2. Size:358K cystek
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Spec. No. C400L3 Issued Date 2009.06.22 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP9435L3 RDSON(MAX) 60m ID -6A Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol Outline SOT-223 MTP9435L3 D S G Gate ... See More ⇒

8.3. Size:343K cystek
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Spec. No. C426Q8 Issued Date 2006.03.31 CYStech Electronics Corp. Revised Date 2013.03.01 Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP9435Q8 ID -5.6A RDSON@VGS=-10V, ID=-5.3A 50m (typ) RDSON@VGS=-4.5V, ID=-4.2A 75m (typ) Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plat... See More ⇒