TP9435PR Datasheet and Replacement

TP9435PR P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP9435BDYQ8 ID -8.4A22m(typ.)RDSON(MAX)@VGS=-10V, ID=-7A 35m(typ.)RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

Spec. No. : C400L3 Issued Date : 2009.06.22 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP9435L3 RDSON(MAX) 60m ID -6AFeatures Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol Outline SOT-223 MTP9435L3D S GGate

Spec. No. : C426Q8 Issued Date : 2006.03.31 CYStech Electronics Corp.Revised Date : 2013.03.01 Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP9435Q8 ID -5.6ARDSON@VGS=-10V, ID=-5.3A 50m(typ) RDSON@VGS=-4.5V, ID=-4.2A 75m(typ) Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plat

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435BDYAQ8 BVDSS -30VID -8.4A23m(typ.)RDSON(MAX)@VGS=-10V, ID=-7A 38m(typ.)RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYAQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note