TP9435PR
MOSFET. Datasheet pdf. Equivalent
Type Designator: TP9435PR
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 440
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
SOT23
TP9435PR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TP9435PR
Datasheet (PDF)
..1. Size:314K tiptek
tp9435pr.pdf 
TP9435PR P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ADVANCED TRENCH PROCESS TECHNOLOGY HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE FULLY CHARACTERIZED AVALANCHE VOLTAGE AND CURRENT IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB PB FREE: 99% SN ABOVE MECHANICAL DATA
8.1. Size:295K cystek
mtp9435bdyq8.pdf
Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP9435BDYQ8 ID -8.4A22m(typ.)RDSON(MAX)@VGS=-10V, ID=-7A 35m(typ.)RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
8.2. Size:358K cystek
mtp9435l3.pdf
Spec. No. : C400L3 Issued Date : 2009.06.22 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP9435L3 RDSON(MAX) 60m ID -6AFeatures Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol Outline SOT-223 MTP9435L3D S GGate
8.3. Size:343K cystek
mtp9435q8.pdf
Spec. No. : C426Q8 Issued Date : 2006.03.31 CYStech Electronics Corp.Revised Date : 2013.03.01 Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP9435Q8 ID -5.6ARDSON@VGS=-10V, ID=-5.3A 50m(typ) RDSON@VGS=-4.5V, ID=-4.2A 75m(typ) Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plat
8.4. Size:297K cystek
mtp9435bdyaq8.pdf
Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435BDYAQ8 BVDSS -30VID -8.4A23m(typ.)RDSON(MAX)@VGS=-10V, ID=-7A 38m(typ.)RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYAQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
8.5. Size:396K stansontech
stp9435.pdf
STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note
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