AON6786 Todos los transistores

 

AON6786 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6786
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: DFN5X6
 

 Búsqueda de reemplazo de AON6786 MOSFET

   - Selección ⓘ de transistores por parámetros

 

AON6786 Datasheet (PDF)

 ..1. Size:268K  1
 aon6786.pdf pdf_icon

AON6786

AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.1. Size:268K  aosemi
 aon6788.pdf pdf_icon

AON6786

AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.2. Size:256K  aosemi
 aon6780.pdf pdf_icon

AON6786

AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.3. Size:255K  aosemi
 aon6782.pdf pdf_icon

AON6786

AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

MOSTRAR MÁS

Otros transistores... IPP45N04S4L-08 , TP2301PR , TP2302NR , TP2305PR , TP3443PR , TP4812NR , TP9435PR , 4N60CB , IRFZ24N , AON6790 , AP9918H , AP9918J , CEB7030L , CEP7030L , CSD30N55 , DMT10N60 , DMF10N60 .

 

 
Back to Top

 


 
.