AON6786 Todos los transistores

 

AON6786 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON6786
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 83 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 85 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 31 nC
   Tiempo de subida (tr): 6 nS
   Conductancia de drenaje-sustrato (Cd): 490 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0029 Ohm
   Paquete / Cubierta: DFN5X6

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AON6786 Datasheet (PDF)

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aon6786.pdf

AON6786 AON6786

AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.1. Size:268K  aosemi
aon6788.pdf

AON6786 AON6786

AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.2. Size:256K  aosemi
aon6780.pdf

AON6786 AON6786

AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.3. Size:255K  aosemi
aon6782.pdf

AON6786 AON6786

AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

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