AON6786
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6786
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 31
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 490
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029
Ohm
Package:
DFN5X6
AON6786
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6786
Datasheet (PDF)
..1. Size:268K 1
aon6786.pdf
AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
8.1. Size:268K aosemi
aon6788.pdf
AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
8.2. Size:256K aosemi
aon6780.pdf
AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
8.3. Size:255K aosemi
aon6782.pdf
AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
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