AON6786 Datasheet and Replacement
Type Designator: AON6786
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 490 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: DFN5X6
AON6786 substitution
AON6786 Datasheet (PDF)
aon6786.pdf

AON678630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6788.pdf

AON678830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon6780.pdf

AON678030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
aon6782.pdf

AON678230V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
Datasheet: IPP45N04S4L-08 , TP2301PR , TP2302NR , TP2305PR , TP3443PR , TP4812NR , TP9435PR , 4N60CB , AON6380 , AON6790 , AP9918H , AP9918J , CEB7030L , CEP7030L , CSD30N55 , DMT10N60 , DMF10N60 .
History: APM8010K | SK860319 | RU17P12C
Keywords - AON6786 MOSFET datasheet
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History: APM8010K | SK860319 | RU17P12C



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