AP9918H Todos los transistores

 

AP9918H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9918H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 83 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

AP9918H Datasheet (PDF)

 ..1. Size:104K  1
 ap9918h ap9918j.pdf pdf_icon

AP9918H

AP9918H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the b

 8.1. Size:81K  ape
 ap9918gj.pdf pdf_icon

AP9918H

AP9918GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-2

 8.2. Size:214K  ape
 ap9918gh ap9918gj.pdf pdf_icon

AP9918H

AP9918GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A Surface mount package GSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggediz

 9.1. Size:83K  ape
 ap9915h ap9915j.pdf pdf_icon

AP9918H

AP9915H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A GSingle Drive Requirement SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with th

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLP042N10G-P | FQA5N90 | FQA11N90CF109

 

 
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