AP9918H
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9918H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 83
nS
Cossⓘ -
Output Capacitance: 310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
TO-252
AP9918H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9918H
Datasheet (PDF)
..1. Size:104K 1
ap9918h ap9918j.pdf
AP9918H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the b
8.1. Size:81K ape
ap9918gj.pdf
AP9918GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-2
8.2. Size:214K ape
ap9918gh ap9918gj.pdf
AP9918GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A Surface mount package GSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggediz
9.1. Size:83K ape
ap9915h ap9915j.pdf
AP9915H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V DCapable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A GSingle Drive Requirement SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with th
9.2. Size:89K ape
ap9916h-j.pdf
AP9916H/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 18V DCapable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A GSingle Drive Requirement SDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with th
9.3. Size:95K ape
ap9915gk.pdf
AP9915GKPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20VD Lower Gate Charge RDS(ON) 50m Fast Switching Characteristic ID 6.2ASD RoHS CompliantSOT-223GDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G l
9.4. Size:80K ape
ap9916gh ap9916gj.pdf
AP9916GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 18V DCapable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A GSurface mount package SDescriptionGThe Advanced Power MOSFETs from APEC provide theDS TO-25
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