CSD30N55 Todos los transistores

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 csd30n55.pdf

CSD30N55 N-Channel Trench Power MOSFET General Description The CSD30N55 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =80A R

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 csd30n70.pdf

CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R

 8.2. Size:207K  inchange semiconductor
 csd30n30.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor CSD30N30 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =2