CSD30N55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD30N55
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 91 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 36 nS
Conductancia de drenaje-sustrato (Cd): 228 pF
Resistencia entre drenaje y fuente RDS(on): 0.0065 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET CSD30N55
CSD30N55 Datasheet (PDF)
csd30n55.pdf
CSD30N55N-Channel Trench Power MOSFETGeneral DescriptionThe CSD30N55 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 5V. This device is suitable for use as awide variety of applications.Schematic DiagramFeatures VDS = 30V,ID =80AR
csd30n70.pdf
CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R
csd30n30.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor CSD30N30FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =2
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