CSD30N55 MOSFET Datasheet: N-Ch, 30V, 80A. Full specification with pinout and replacement list

CSD30N55 Specs and Replacement

Type Designator: CSD30N55

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 91 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 228 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-252

CSD30N55 substitution

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CSD30N55 datasheet

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CSD30N55 N-Channel Trench Power MOSFET General Description The CSD30N55 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =80A R ... See More ⇒

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CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R ... See More ⇒

8.2. Size:207K inchange semiconductor
csd30n30.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor CSD30N30 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

Detailed specifications: TP9435PR, 4N60CB, AON6786, AON6790, AP9918H, AP9918J, CEB7030L, CEP7030L, IRFB31N20D, DMT10N60, DMF10N60, DMK10N60, DMG10N60, H06N60U, JCS4N60VB, JCS4N60RB, JCS4N60BB