DMG10N60 Todos los transistores

 

DMG10N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG10N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-263

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DMG10N60 Datasheet (PDF)

 ..1. Size:2253K  1
dmt10n60 dmf10n60 dmk10n60 dmg10n60.pdf

DMG10N60
DMG10N60

12N60 600V N-Channel Power MOSFET RDS(ON)

 0.1. Size:454K  diodes
dmg10n60sct.pdf

DMG10N60
DMG10N60

DMG10N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D BV R DSS DS(ON)T = +25C C High BV Rating for Power Application DSS600V 0.75@V = 10V 12A GS Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For autom

 0.2. Size:261K  inchange semiconductor
dmg10n60sct.pdf

DMG10N60
DMG10N60

isc N-Channel MOSFET Transistor DMG10N60SCTFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 750m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 9.1. Size:159K  diodes
dmg1024uv.pdf

DMG10N60
DMG10N60

DMG1024UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: S

 9.2. Size:206K  diodes
dmg1016udw.pdf

DMG10N60
DMG10N60

DMG1016UDWCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per

 9.3. Size:140K  diodes
dmg1012t.pdf

DMG10N60
DMG10N60

DMG1012TN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 9.4. Size:281K  diodes
dmg1013uwq.pdf

DMG10N60
DMG10N60

DMG1013UWQ P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See D

 9.5. Size:142K  diodes
dmg1013t.pdf

DMG10N60
DMG10N60

DMG1013TP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 9.6. Size:133K  diodes
dmg1013uw.pdf

DMG10N60
DMG10N60

DMG1013UWP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 9.7. Size:228K  diodes
dmg1029sv.pdf

DMG10N60
DMG10N60

DMG1029SVCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceDevice V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25C Low Input Capacitance 1.7 @ VGS = 10V 500mA Fast Switching Speed Q1 60V Ultra-Small Surface Mount Package 3 @ VGS = 4.5V 400mA Totally Lead-Free & Fully RoHS comp

 9.8. Size:230K  diodes
dmg1026uv.pdf

DMG10N60
DMG10N60

DMG1026UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 1.8 @ VGS = 10V 440mA 60V Low Input/Output Leakage 2.1 @ VGS = 4.5V 410mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (No

 9.9. Size:152K  diodes
dmg1012uw.pdf

DMG10N60
DMG10N60

DMG1012UWN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 9.10. Size:133K  diodes
dmg1023uv.pdf

DMG10N60
DMG10N60

DMG1023UVDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: S

 9.11. Size:200K  diodes
dmg1016v.pdf

DMG10N60
DMG10N60

DMG1016VCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage VGS(th)

 9.12. Size:1145K  kexin
dmg1013t.pdf

DMG10N60
DMG10N60

SMD Type MOSFETP-Channel MOSFETDMG1013T (KMG1013T)SOT-523 Unit:mm+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 VDS (V) =-20V ID =-0.46 A RDS(ON) 0.7 (VGS =-4.5V)3 RDS(ON) 0.9 (VGS =-2.5V)0.30.05 RDS(ON) 1.3 (VGS =-1.8V)+0.10.5-0.1 ESD Protected Up To 3KV1.Gate2.Source3.DrainDrain

 9.13. Size:841K  cn vbsemi
dmg1013uw-7.pdf

DMG10N60
DMG10N60

DMG1013UW-7www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv

 9.14. Size:1598K  cn tech public
dmg1012t.pdf

DMG10N60
DMG10N60

 9.15. Size:1597K  cn tech public
dmg1013t.pdf

DMG10N60
DMG10N60

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