DMG10N60. Аналоги и основные параметры
Наименование производителя: DMG10N60
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 225 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 115 ns
Cossⓘ - Выходная емкость: 200 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: TO-263
Аналог (замена) для DMG10N60
- подборⓘ MOSFET транзистора по параметрам
DMG10N60 даташит
0.1. Size:454K diodes
dmg10n60sct.pdf 

DMG10N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D BV R DSS DS(ON) T = +25 C C High BV Rating for Power Application DSS 600V 0.75 @V = 10V 12A GS Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For autom
0.2. Size:261K inchange semiconductor
dmg10n60sct.pdf 

isc N-Channel MOSFET Transistor DMG10N60SCT FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 750m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p
9.1. Size:159K diodes
dmg1024uv.pdf 

DMG1024UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Terminal Connections S
9.2. Size:206K diodes
dmg1016udw.pdf 

DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-363 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per
9.3. Size:140K diodes
dmg1012t.pdf 

DMG1012T N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-523 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020
9.4. Size:281K diodes
dmg1013uwq.pdf 

DMG1013UWQ P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT323 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminal Connections See D
9.5. Size:142K diodes
dmg1013t.pdf 

DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-523 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020
9.6. Size:133K diodes
dmg1013uw.pdf 

DMG1013UW P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-323 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020
9.7. Size:228K diodes
dmg1029sv.pdf 

DMG1029SV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance Device V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 1.7 @ VGS = 10V 500mA Fast Switching Speed Q1 60V Ultra-Small Surface Mount Package 3 @ VGS = 4.5V 400mA Totally Lead-Free & Fully RoHS comp
9.8. Size:230K diodes
dmg1026uv.pdf 

DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Low Input Capacitance Fast Switching Speed 1.8 @ VGS = 10V 440mA 60V Low Input/Output Leakage 2.1 @ VGS = 4.5V 410mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (No
9.9. Size:152K diodes
dmg1012uw.pdf 

DMG1012UW N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-323 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020
9.10. Size:133K diodes
dmg1023uv.pdf 

DMG1023UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Terminal Connections S
9.11. Size:200K diodes
dmg1016v.pdf 

DMG1016V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-563 Low Gate Threshold Voltage VGS(th)
9.12. Size:1145K kexin
dmg1013t.pdf 

SMD Type MOSFET P-Channel MOSFET DMG1013T (KMG1013T) SOT-523 Unit mm +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 VDS (V) =-20V ID =-0.46 A RDS(ON) 0.7 (VGS =-4.5V) 3 RDS(ON) 0.9 (VGS =-2.5V) 0.3 0.05 RDS(ON) 1.3 (VGS =-1.8V) +0.1 0.5-0.1 ESD Protected Up To 3KV 1.Gate 2.Source 3.Drain Drain
9.13. Size:841K cn vbsemi
dmg1013uw-7.pdf 

DMG1013UW-7 www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Conv
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History: DMF10N60