DMG10N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMG10N60
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 225 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 42 nC
Время нарастания (tr): 115 ns
Выходная емкость (Cd): 200 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.8 Ohm
Тип корпуса: TO-263
DMG10N60 Datasheet (PDF)
dmg10n60sct.pdf
DMG10N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D BV R DSS DS(ON)T = +25C C High BV Rating for Power Application DSS600V 0.75@V = 10V 12A GS Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For autom
dmg10n60sct.pdf
isc N-Channel MOSFET Transistor DMG10N60SCTFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 750m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmg1024uv.pdf
DMG1024UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: S
dmg1016udw.pdf
DMG1016UDWCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per
dmg1012t.pdf
DMG1012TN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020
dmg1013uwq.pdf
DMG1013UWQ P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See D
dmg1013t.pdf
DMG1013TP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020
dmg1013uw.pdf
DMG1013UWP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020
dmg1029sv.pdf
DMG1029SVCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceDevice V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25C Low Input Capacitance 1.7 @ VGS = 10V 500mA Fast Switching Speed Q1 60V Ultra-Small Surface Mount Package 3 @ VGS = 4.5V 400mA Totally Lead-Free & Fully RoHS comp
dmg1026uv.pdf
DMG1026UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 1.8 @ VGS = 10V 440mA 60V Low Input/Output Leakage 2.1 @ VGS = 4.5V 410mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (No
dmg1012uw.pdf
DMG1012UWN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020
dmg1023uv.pdf
DMG1023UVDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: S
dmg1016v.pdf
DMG1016VCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage VGS(th)
dmg1013t.pdf
SMD Type MOSFETP-Channel MOSFETDMG1013T (KMG1013T)SOT-523 Unit:mm+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 VDS (V) =-20V ID =-0.46 A RDS(ON) 0.7 (VGS =-4.5V)3 RDS(ON) 0.9 (VGS =-2.5V)0.30.05 RDS(ON) 1.3 (VGS =-1.8V)+0.10.5-0.1 ESD Protected Up To 3KV1.Gate2.Source3.DrainDrain
dmg1013uw-7.pdf
DMG1013UW-7www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv
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