ME80N75F Todos los transistores

 

ME80N75F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME80N75F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 61.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 55.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40.8 nS

Cossⓘ - Capacitancia de salida: 435 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO-220F

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ME80N75F datasheet

 ..1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N75F

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 ..2. Size:1150K  matsuki electric
 me80n75f me80n75f-g.pdf pdf_icon

ME80N75F

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 7.1. Size:1190K  matsuki electric
 me80n75t me80n75t-g.pdf pdf_icon

ME80N75F

ME80N75T / ME80N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 9.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N75F

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

MOSTRAR MÁS

Otros transistores... DMG10N60 , H06N60U , JCS4N60VB , JCS4N60RB , JCS4N60BB , JCS4N60CB , JCS4N60FB , LD1014D , EMB04N03H , ME80N75FG , MMF60R280QTH , NCE3401AY , NDF08N60ZG , NDP08N60ZG , PTF10149 , RJK0234DNS , SPP100N06S2-05 .

History: FHF5N60 | S10H18R | NDT4N70 | NTD4965N | WMM28N60F2 | AUIRF7343Q | 2SK4070I

 

 

 

 

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