All MOSFET. ME80N75F Datasheet

 

ME80N75F Datasheet and Replacement


   Type Designator: ME80N75F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 61.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 55.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 40.8 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220F
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ME80N75F Datasheet (PDF)

 ..1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N75F

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 ..2. Size:1150K  matsuki electric
 me80n75f me80n75f-g.pdf pdf_icon

ME80N75F

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 7.1. Size:1190K  matsuki electric
 me80n75t me80n75t-g.pdf pdf_icon

ME80N75F

ME80N75T / ME80N75T-GN- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 9.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N75F

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

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History: BSZ035N03LSG | SVF9N90F

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