MMF60R280QTH Todos los transistores

 

MMF60R280QTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMF60R280QTH
   Código: 60R280Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 927 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO220F

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MMF60R280QTH Datasheet (PDF)

 ..1. Size:279K  inchange semiconductor
mmf60r280qth.pdf

MMF60R280QTH
MMF60R280QTH

isc N-Channel MOSFET Transistor MMF60R280QTHFEATURESDrain Current : I = 13.8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 4.1. Size:1167K  1
mmf60r280q.pdf

MMF60R280QTH
MMF60R280QTH

MMF60R280Q Datasheet MMF60R280Q 600V 0.28 N-channel MOSFET Description MMF60R280Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 4.2. Size:1231K  magnachip
mmf60r280qbth.pdf

MMF60R280QTH
MMF60R280QTH

MMF60R280QB Datasheet MMF60R280QB 600V 0.28 N-channel MOSFET Description MMF60R280QB is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 7.1. Size:1130K  magnachip
mmf60r290pth.pdf

MMF60R280QTH
MMF60R280QTH

MMF60R290P Datasheet MMF60R290P 600V 0.29 N-channel MOSFET Description MMF60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 7.2. Size:279K  inchange semiconductor
mmf60r290pth.pdf

MMF60R280QTH
MMF60R280QTH

isc N-Channel MOSFET Transistor MMF60R290PTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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