MMF60R280QTH. Аналоги и основные параметры
Наименование производителя: MMF60R280QTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 43 ns
Cossⓘ - Выходная емкость: 927 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO220F
Аналог (замена) для MMF60R280QTH
- подборⓘ MOSFET транзистора по параметрам
MMF60R280QTH даташит
mmf60r280qth.pdf
isc N-Channel MOSFET Transistor MMF60R280QTH FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
mmf60r280q.pdf
MMF60R280Q Datasheet MMF60R280Q 600V 0.28 N-channel MOSFET Description MMF60R280Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r280qbth.pdf
MMF60R280QB Datasheet MMF60R280QB 600V 0.28 N-channel MOSFET Description MMF60R280QB is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
mmf60r290pth.pdf
MMF60R290P Datasheet MMF60R290P 600V 0.29 N-channel MOSFET Description MMF60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Другие MOSFET... JCS4N60VB , JCS4N60RB , JCS4N60BB , JCS4N60CB , JCS4N60FB , LD1014D , ME80N75F , ME80N75FG , MMIS60R580P , NCE3401AY , NDF08N60ZG , NDP08N60ZG , PTF10149 , RJK0234DNS , SPP100N06S2-05 , SPB100N06S2-05 , SSM5N03FE .
History: PCJ3139K | NTMS10P02R2 | TSF50N06M | APTM100DA18CT1G | BR20N40 | KTK921U | AOC3870
History: PCJ3139K | NTMS10P02R2 | TSF50N06M | APTM100DA18CT1G | BR20N40 | KTK921U | AOC3870
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