2SK1664 Todos los transistores

 ..1. Size:443K  nec
 2sk1664.pdf

 8.1. Size:82K  renesas
 2sk1669.pdf

2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code PRSS

 8.2. Size:81K  renesas
 2sk1668.pdf

2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM)

 8.3. Size:80K  renesas
 2sk1667.pdf

2SK1667 Silicon N Channel MOS FET REJ03G0964-0200 (Previous ADE-208-1308) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB)

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 2sk1662m.pdf

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 2sk1662.pdf

isc N-Channel MOSFET Transistor 2SK1662 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.6. Size:214K  inchange semiconductor
 2sk1667.pdf

isc N-Channel MOSFET Transistor 2SK1667 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS low on resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator,

 8.7. Size:63K  inchange semiconductor
 2sk1660.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1660 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- VDSS=450 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL VALUE ARAMETER T VD