2SK1664
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1664
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6
Ohm
Package:
TO220F
2SK1664
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1664
Datasheet (PDF)
8.1. Size:82K renesas
2sk1669.pdf 
2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous: ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code: PRSS
8.2. Size:81K renesas
2sk1668.pdf
2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous: ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)
8.3. Size:80K renesas
2sk1667.pdf
2SK1667 Silicon N Channel MOS FET REJ03G0964-0200 (Previous: ADE-208-1308) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)
8.5. Size:209K inchange semiconductor
2sk1662.pdf
isc N-Channel MOSFET Transistor 2SK1662DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
8.6. Size:214K inchange semiconductor
2sk1667.pdf
isc N-Channel MOSFET Transistor 2SK1667DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable for switchingregulator,
8.7. Size:63K inchange semiconductor
2sk1660.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1660 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VD
Datasheet: 2SK1590
, 2SK1591
, 2SK1592
, 2SK1593
, 2SK1594
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, 2SK162
, 2SK163
, AO4468
, 2SK1712
, 2SK1748
, 2SK1749
, 2SK1750
, 2SK1751
, 2SK1752
, 2SK1753
, 2SK1756
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