MMD65R600QRH Todos los transistores

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 mmd65r600qrh.pdf

MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 ..2. Size:309K  inchange semiconductor
 mmd65r600qrh.pdf

isc N-Channel MOSFET Transistor MMD65R600QRH FEATURES Drain Current I = 7.3A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

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 mmd65r900q.pdf

MMD65R900Q Datasheet MMD65R900Q 650V 0.90 N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

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 mmd65r380qrh.pdf

MMD65R380Q Datasheet MMD65R380Q 650V 0.38 N-channel MOSFET Description MMD65R380Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 8.3. Size:310K  inchange semiconductor
 mmd65r380qrh.pdf

isc N-Channel MOSFET Transistor MMD65R380QRH FEATURES Drain Current I = 10.6A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 8.4. Size:288K  inchange semiconductor
 mmd65r900qrh.pdf

isc N-Channel MOSFET Transistor MMD65R900QRH FEATURES Drain Current I =75A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =6.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen