MMD65R600QRH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMD65R600QRH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 62.5 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 7.3 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 33 ns
Выходная емкость (Cd): 640 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
Тип корпуса: TO-252
Аналог (замена) для MMD65R600QRH
MMD65R600QRH Datasheet (PDF)
mmd65r600qrh.pdf
MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mmd65r600qrh.pdf
isc N-Channel MOSFET Transistor MMD65R600QRHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mmd65r900q.pdf
MMD65R900Q Datasheet MMD65R900Q 650V 0.90 N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mmd65r380qrh.pdf
MMD65R380Q Datasheet MMD65R380Q 650V 0.38 N-channel MOSFET Description MMD65R380Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mmd65r380qrh.pdf
isc N-Channel MOSFET Transistor MMD65R380QRHFEATURESDrain Current : I = 10.6A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
mmd65r900qrh.pdf
isc N-Channel MOSFET Transistor MMD65R900QRHFEATURESDrain Current : I =75A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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