AO3419L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Rev 1:Nov 2004AO3419, AO3419L ( Green Product )P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3419 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -3.5 Aoperation with gate voltages as low as 2.5V. This RDS(ON)

AO341920V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3419 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -3.5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFETAO3419 (KO3419)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features3VDS (V) = -20VID = -3.5 ARDS(ON) 75m (VGS = -10V)1 2+0.02RDS(ON) 95m (VGS = -4.5V) +0.10.15 -0.020.95 -0.11.9+0.1-0.2DRDS(ON) 145m (VGS = -2.5V)1. Gate2. SourceG3. DrainSAbsolute Maximum Ratings Ta = 25Parameter Symbol R

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFETAO3419 (KO3419)SOT-23Unit: mm+0.12.9 -0.1Features+0.10.4 -0.1VDS (V) = -20V3ID = -3.5 ARDS(ON) 75m (VGS = -10V)1 2RDS(ON) 95m (VGS = -4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 145m (VGS = -2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta =