AO3419L Todos los transistores

Rev 1 Nov 2004 AO3419, AO3419L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3.5 A operation with gate voltages as low as 2.5V. This RDS(ON)

AO3419 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -3.5A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET AO3419 (KO3419) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -20V ID = -3.5 A RDS(ON) 75m (VGS = -10V) 1 2 +0.02 RDS(ON) 95m (VGS = -4.5V) +0.1 0.15 -0.02 0.95 -0.1 1.9+0.1 -0.2 D RDS(ON) 145m (VGS = -2.5V) 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol R

SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET AO3419 (KO3419) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) = -20V 3 ID = -3.5 A RDS(ON) 75m (VGS = -10V) 1 2 RDS(ON) 95m (VGS = -4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 145m (VGS = -2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta =