ME4970 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME4970
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 9.5 nC
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET ME4970
ME4970 Datasheet (PDF)
me4970 me4970g.pdf
ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely
me4970 me4970-g.pdf
ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely
me4970.pdf
ME4970www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D
me4970a me4970a-g.pdf
ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=10V power field effect transistors are produced using high cell density, RDS(ON)20m@VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD
me4972-g.pdf
ME4972-G Dual N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)376m@VGS=10V The ME4972-G is the N-Channel logic enhancement mode power RDS(ON)360m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F