ME4970 - аналоги, параметры транзистора - Справочник транзисторов

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ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON) 16m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

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ME4970 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S D

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ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON) 14m @VGS=10V power field effect transistors are produced using high cell density, RDS(ON) 20m @VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD