SUB65P06-20 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUB65P06-20 datasheet

..1. Size:69K 1
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SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.020 65a S TO 220AB TO 263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06 20 Top View P Channel MOSFET SUP65P06 20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 65a Con

..2. Size:54K vishay
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SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.020 65a TO-220AB S TO-263 G DRAIN connected to TAB G D S G D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_

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isc P-Channel MOSFET Transistor SUB65P06-20 FEATURES Drain Current I = -65A@ T =25 D C Drain Source Voltage V = -60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

7.1. Size:82K vishay
sup65p04-15 sub65p04-15.pdf pdf_icon

SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = 10 V 65 40 40 0.023 @ VGS = 4.5 V 50 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15 Top View P-Channel MOSFET SUP65P04-15 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Param