All MOSFET. SUB65P06-20 Datasheet

 

SUB65P06-20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUB65P06-20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO263

 SUB65P06-20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUB65P06-20 Datasheet (PDF)

 ..1. Size:69K  1
 sup65p06-20 sub65p06-20.pdf

SUB65P06-20 SUB65P06-20

SUP/SUB65P06-20P-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.020 65aSTO 220ABTO 263GDRAIN connected to TABG D STop ViewGD SDSUB65P06 20Top ViewP Channel MOSFETSUP65P06 20Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 65aCon

 ..2. Size:54K  vishay
 sup65p06-20 sub65p06-20.pdf

SUB65P06-20 SUB65P06-20

SUP/SUB65P06-20Vishay SiliconixP-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.020 65aTO-220ABSTO-263GDRAIN connected to TABG D S G D STop ViewTop ViewDSUB65P06-20SUP65P06-20 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_

 ..3. Size:329K  inchange semiconductor
 sub65p06-20.pdf

SUB65P06-20 SUB65P06-20

isc P-Channel MOSFET Transistor SUB65P06-20FEATURESDrain Current : I = -65A@ T =25D CDrain Source Voltage: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.1. Size:82K  vishay
 sup65p04-15 sub65p04-15.pdf

SUB65P06-20 SUB65P06-20

SUP/SUB65P04-15New ProductVishay SiliconixP-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.015 @ VGS = 10 V6540400.023 @ VGS = 4.5 V 50STO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SDSUB65P04-15Top ViewP-Channel MOSFETSUP65P04-15ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Param

 7.2. Size:163K  vishay
 sub65p04-15 sup65p04-15.pdf

SUB65P06-20 SUB65P06-20

SUP/SUB65P04-15Vishay SiliconixP-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Compliant to RoHS Directive 2002/95/EC0.015 at VGS = - 10 V - 65- 400.023 at VGS = - 4.5 V - 50STO-263GDRAIN connected to TABG D STop ViewG D SSUB65P04-15Top ViewDSUP65P04-15P-Channel MOSFETOrderin

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK2480 | PMV65UN

 

 
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